The pursuit for power diodes with faster switching
rate/speed, low forward voltage drop, high reverse blocking
voltage in many applications, fast reverse recovery, reduced
overall resistance in forward mode, and reduced heat/power
loss has been going on for more than two decades, and it is
becoming more crucial as most power semiconductor devices
are able to achieve high switching speed and low loss
operation [1]-[6]. Partially, the difficulty in achieving the
required high performance of the power diode is because of its
simple device structure. The conventional diode electrical
performances are closely linked to one another through just a
few device arrangement and doping parameters..
The pursuit for power diodes with faster switchingrate/speed, low forward voltage drop, high reverse blockingvoltage in many applications, fast reverse recovery, reducedoverall resistance in forward mode, and reduced heat/powerloss has been going on for more than two decades, and it isbecoming more crucial as most power semiconductor devicesare able to achieve high switching speed and low lossoperation [1]-[6]. Partially, the difficulty in achieving therequired high performance of the power diode is because of itssimple device structure. The conventional diode electricalperformances are closely linked to one another through just afew device arrangement and doping parameters..
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