more closed to each other near the high voltage electrode,
indicating more stress developed there. However, comparing
similar figures for sphere-sphere and plane-plane electrode, it
is revealed that comparatively less stress has been developed
for plane electrodes, even if the other conditions like
electrode size, gap distance, applied voltage etc are constant.
Some important outline can be drawn from the above
discussion by comparing the fig. 3(a), fig. 3(b), fig. 4(a) and
fig. 4(b)) which are listed below:
(i) Under same magnitude of applied voltage, less stress is
developed in the dielectric for symmetrically applied
voltage compared to that for asymmetrically applied
voltage.
(ii) Although the radius and gap distance of the both types
of electrodes are same (radius = 5, gap = 10) less stress
is developed in the dielectric for plane-plane electrode
compared to sphere-sphere electrode, for both types of
applied voltage.
(iii) Looking at the distribution of the equipotential lines
along the electrode axis, it is revealed that, in all the
cases, more stress is developed near the high voltage
electrode, compared to other points in the interelectrode
gap.