The design and RF characteristics of planar
dipole antenna facilitated with coplanar waveguide structure was
presented. The dipole antennas were fabricated on semiinsulated
GaAs substrates by using standard photolithography
and lift-off process. As expected, it can be seen that the
fundamental resonant frequency shift to higher frequency when
the length of antenna decreases. Interestingly, the resonant
frequencies of antenna are almost unchanged with the variation
of antenna width and metal thickness. The width of dipole
antenna and metal thickness only has an effect on the magnitude
of return loss where the magnitude increases to more negative
value with the increase of width and decrease of metal thickness.
One of the most promising applications of our proposed dipole
antenna is the capability to be integrated directly with
AlGaAs/GaAs Schottky diode without any insertion of matching
circuit between them.