Co-doped SnO2 thin films are grown on sapphire (0001) substrates at 600 °C by the technique of dual-beam pulsed laser deposition. The
prepared films show preferred orientation in the [100] direction of the rutile structure of SnO2. Nonequilibrium film growth process results in
doping Co into SnO2 much above the thermal equilibrium limit. A Film with 3% of Co is ferromagnetic at room temperature with a remanent
magnetization of ∼26% and a coercivity of ∼9.0 mT. As Co doping content x increases, the optical band gap absorption edge (E0) of the Codoped
SnO2 thin films initially shows a redshift at low x up to x=0.12 and then increases at the higher x, which are attributed to the sp–d
exchange interactions and alloying effects, respectively.