Various deposition parameters especially the chamber ambient pressure has remarkable effects on the deposition of e-beam evaporated NiO thin films.
The deposition rate of the oxidized NiO films was about 6.67 nms?1. X-ray diffraction shows the sample is amorphous in nature.
EDAX study was employed to estimate the elemental composition of the constituent element of NiO films.
Temperature dependence of resistivity studies in air indicate that after successive 3–4 operations of heating and cooling cycle, the material exhibits a resistivity in reversible nature in the investigated temperature range. The thickness dependence of electrical conductivity is well in conformity with Fuchs–Sondheimer size effect theory.
The TCR and electrical conductivity studies exhibit semiconducting behavior.
The calculation of activation energy suggests that thermally activated conduction mechanism plays significant role in conductance process.
Thermopower studies of NiO samples exhibit a p-type carrier.
Optical studies exhibit high transmittance in the visible as well as in the near infra-red region.
Author’s study of band gap determination from optical data does agree well with the value of band gap by other workers.
The very low value of reflectance coupled with high value of transmittance of NiO is a potential advantage in using of this material in energy efficient device applications.