The sample is placed in the reaction chamber and
the chamber is evacuated.
Process gas(es) are flowed into the chamber to
sustain pressures from 300 to 1500 mTorr.
The process gas is subjected to a MHz-range RF
electromagnetic field, creating plasma at near
ambient temperature.
The type of interaction between the plasma and the
sample surface depends on parameters such as the
intensity and frequency of the RF power used to
excite the plasma, the type of gas(es) that are
ionized, the pressure and flow rate of the gas(es),
the sample surface material, and the duration of the
plasma process.