A comparison of device energy losses at 750 V, 100 A
and 150°C is given in TABLE VII. . Note that some of the
devices need to be paralleled to handle 100 Apeak current.
Further, the converter losses when these devices are used in a
13 kV and 1 MW CNT are given in TABLE VIII. . Note that
several devices are connected in series in order to scale the
converter to high voltages. It can be observed that the SiC
devices have much lower switching losses than any of their
counterparts, while the hybrid Si/SiC devices perform better
with respect to conduction losses. However, looking at the
overall losses, a good device choice for the given application
seems to be the hybrid Si/SiC devices, contrary to the
conventional wisdom where one may have chosen the SiC
MOSFETs due to the lower advertised losses. The primary
reason for this behavior is much lower switching losses
relative to the conduction losses in an AC/AC converter
contrary to a VSI where the ratio is relatively larger.
A comparison of device energy losses at 750 V, 100 A
and 150°C is given in TABLE VII. . Note that some of the
devices need to be paralleled to handle 100 Apeak current.
Further, the converter losses when these devices are used in a
13 kV and 1 MW CNT are given in TABLE VIII. . Note that
several devices are connected in series in order to scale the
converter to high voltages. It can be observed that the SiC
devices have much lower switching losses than any of their
counterparts, while the hybrid Si/SiC devices perform better
with respect to conduction losses. However, looking at the
overall losses, a good device choice for the given application
seems to be the hybrid Si/SiC devices, contrary to the
conventional wisdom where one may have chosen the SiC
MOSFETs due to the lower advertised losses. The primary
reason for this behavior is much lower switching losses
relative to the conduction losses in an AC/AC converter
contrary to a VSI where the ratio is relatively larger.
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