Abstract
This contribution describes the introduction of hydrogenated microcrystalline silicon
(mc-Si:H) as novel absorber material for thin-film silicon solar cells. Work done at IMT
Neuchatel # in connection with deposition of mc-Si:H layers by very high frequency glow
discharge deposition is related in detail. Corresponding layer properties w.r.t. material
microstructure, hydrogen content, stability and electronic transport are referred to. Basic
properties of single-junction, entirely microcrystalline, thin-film silicon solar cells are related:
Spectral response, stability w.r.t. light-induced degradation, basic solar cell parameters (Voc;
Jsc and FF) obtained by IMT Neuchatel # and by other laboratories are listed and commented;
the deposition rate issue is addressed. Finally, microcrystalline/amorphous, i.e. ‘‘micromorph’’
silicon tandemsolar cells, are described, together with recent developments on the research
and industrial front.
Abstract
This contribution describes the introduction of hydrogenated microcrystalline silicon
(mc-Si:H) as novel absorber material for thin-film silicon solar cells. Work done at IMT
Neuchatel # in connection with deposition of mc-Si:H layers by very high frequency glow
discharge deposition is related in detail. Corresponding layer properties w.r.t. material
microstructure, hydrogen content, stability and electronic transport are referred to. Basic
properties of single-junction, entirely microcrystalline, thin-film silicon solar cells are related:
Spectral response, stability w.r.t. light-induced degradation, basic solar cell parameters (Voc;
Jsc and FF) obtained by IMT Neuchatel # and by other laboratories are listed and commented;
the deposition rate issue is addressed. Finally, microcrystalline/amorphous, i.e. ‘‘micromorph’’
silicon tandemsolar cells, are described, together with recent developments on the research
and industrial front.
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Abstract
This contribution describes the introduction of hydrogenated microcrystalline silicon
(mc-Si:H) as novel absorber material for thin-film silicon solar cells. Work done at IMT
Neuchatel # in connection with deposition of mc-Si:H layers by very high frequency glow
discharge deposition is related in detail. Corresponding layer properties w.r.t. material
microstructure, hydrogen content, stability and electronic transport are referred to. Basic
properties of single-junction, entirely microcrystalline, thin-film silicon solar cells are related:
Spectral response, stability w.r.t. light-induced degradation, basic solar cell parameters (Voc;
Jsc and FF) obtained by IMT Neuchatel # and by other laboratories are listed and commented;
the deposition rate issue is addressed. Finally, microcrystalline/amorphous, i.e. ‘‘micromorph’’
silicon tandemsolar cells, are described, together with recent developments on the research
and industrial front.
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