Carbon nanotubes (CNTs) have drawn great attention since they
were found at first in1991 [1] because of their marvelous structure,
high stability,and excellent conductivity or semiconductivity [2].
Numerous studies have been devoted to investigation of stable
structures of non–carbonnanotubes.
Among these structures, the
III–V analogs of carbon nanotubes such as boron-nitride nanotubes
(BNNTs) and aluminum-nitride nanotubes (AlNNTs) are of great importance [3–5].
These nanotubes are wide-band gap semiconduc-
tors which are known by high temperature stability,considerable
thermal conductivity,low thermal expansion,resistance to chemi-
cals and gases used in semiconductor processing and reliable
dielectric properties [6].
Carbon nanotubes (CNTs) have drawn great attention since theywere found at first in1991 [1] because of their marvelous structure,high stability,and excellent conductivity or semiconductivity [2].Numerous studies have been devoted to investigation of stablestructures of non–carbonnanotubes.Among these structures, theIII–V analogs of carbon nanotubes such as boron-nitride nanotubes(BNNTs) and aluminum-nitride nanotubes (AlNNTs) are of great importance [3–5].These nanotubes are wide-band gap semiconduc-tors which are known by high temperature stability,considerablethermal conductivity,low thermal expansion,resistance to chemi-cals and gases used in semiconductor processing and reliabledielectric properties [6].
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