In this paper, a new paradigm for the operation
principle of a ferroelectric random access memory (FeRAM)
is presented. The new type of FeRAM is based on piezo–
acoustic phenomena in ferroelectric films. It is called
Acousto-Ferroelectric RAM (AFeRAM) because its operation
is based on the acoustic method for detecting intrinsic
remanent polarization of a ferroelectric memory cell. It has
been shown that the novel memory cell concept is highly
scalable, so that the structural effective memory cell size can
be scaled down to 1F2. The advantages of the AFeRAM
element are outlined in the text