It can also decouple the contradictory demand in bare TiO2 film between fast charge transport which desires heavy doping and less electron recombi-nation which desires light doping [2], because the light-injected electrons from the TiO2-dye interface in F-T DSCs only need to traverse a ultra thin layer of TiO2 prior to being extracted by the highly conductive FTO core via a drift-assisted transport [7] instead of diffusive transport [8] in bare TiO2 DSCs (a slow mechanism with electron escape times of 1-10 ms for 10-mm-thick TiO2 films) photoanodes.