Crystalline Siaccountsformorethan90

Crystalline Siaccountsformorethan90%ofthesolarcells
produced todayandabout95%ofthosecellsarefabricatedon
p-type Si [1]. Thisisbecauseofthewell-establishedtechnology
and equipmentbaseforp-typecellfabricationandlowerwafer
and cellprocessingcostcomparedton-typecells.However,p-type
wafersgenerallyhavelowerbulklifetimeandaremoresuscep-
tible tometalimpuritiescomparedtothen-typewafers [2,3]. It
has beenreportedthattheminoritycarrierlifetimeinp-typeSiis
frequentlylimitedbyironrelateddefects [2,4] with largerelectron
capturecrosssectioncomparedtohole [5]. Ironisoftenpresentin
the feedstockmaterialandcanbeintroducedduringprocessing
[6]. Therefore,majorityofthePVindustrycurrentlyusesPOCl3
diffusion toremovemetalimpuritiesincludingiron [7–11]. POCl3
getteringisattributedtotheformationofmisfit dislocationson
the surfacewhichprovidethesinkforimpuritygettering.Inad-
dition, higherphosphorussurfaceconcentrationenhances
getteringbecauseitincreasessolidsolubilityandsegregation
coefficient ofmetalimpurities [7–17]. Thephosphorusion-im-
planted emitterhasrecentlyshownhigherperformanceduetoin-
situ oxidepassivationduringtheimplantannealingprocess
[18,19]. However,itsgetteringqualityisnotfullyunderstoodand
compared withPOCl3 diffusion. Thispaperconductsasystematic
and controlledstudytocomparetheimpactofphosphorusion-
implantation andPOCl3 diffusion inducedgetteringoncastquasi-
mono andCzochralski(Cz)Sisolarcells.

ผลลัพธ์ (ไทย) 1:

ผลึก Siaccountsformorethan90% ofthesolarcellsผลิต todayandabout95% ofthosecellsarefabricatedonชนิด p Si [1] Thisisbecauseofthewell-establishedtechnologyและ equipmentbaseforp-typecellfabricationandlowerwaferและ cellprocessingcostcomparedton-typecells อย่างไรก็ตาม ชนิด pwafersgenerallyhavelowerbulklifetimeandaremoresuscep-tometalimpuritiescomparedtothen tible-typewafers [2, 3] มันมี beenreportedthattheminoritycarrierlifetimeinp-typeSiisfrequentlylimitedbyironrelateddefects [2, 4] กับ largerelectroncapturecrosssectioncomparedtohole [5] Ironisoftenpresentinfeedstockmaterialandcanbeintroducedduringprocessing การ[6] . ดังนั้น majorityofthePVindustrycurrentlyusesPOCl3แพร่ toremovemetalimpuritiesincludingiron [7-11] POCl3getteringisattributedtotheformationofmisfit dislocationsonsurfacewhichprovidethesinkforimpuritygettering Inad-dition, higherphosphorussurfaceconcentrationenhancesgetteringbecauseitincreasessolidsolubilityandsegregationค่าสัมประสิทธิ์ ofmetalimpurities [7-17] Thephosphorusion-im -ปลูก emitterhasrecentlyshownhigherperformanceduetoin-oxidepassivationduringtheimplantannealingprocess เสถียร[18,19] . อย่างไรก็ตาม itsgetteringqualityisnotfullyunderstoodandเปรียบเทียบการกระจาย withPOCl3 Thispaperconductsasystematicและ controlledstudytocomparetheimpactofphosphorusion-ฝัง andPOCl3 แพร่ inducedgetteringoncastquasi-โมโน andCzochralski (Cz) Sisolarcells

ผลลัพธ์ (ไทย) 2:

ผลึก Siaccountsformorethan90% ofthesolarcells
ผลิต todayandabout95% ofthosecellsarefabricatedon
P-ประเภทศรี [1] Thisisbecauseofthewell-establishedtechnology
และ equipmentbaseforp-typecellfabricationandlowerwafer
และ cellprocessingcostcomparedton-typecells.However, p-ประเภท
wafersgenerallyhavelowerbulklifetimeandaremoresuscep-
tible tometalimpuritiescomparedtothen-typewafers [2,3] มัน
มี beenreportedthattheminoritycarrierlifetimeinp-typeSiis
frequentlylimitedbyironrelateddefects [2,4] ด้วย largerelectron
capturecrosssectioncomparedtohole [5] Ironisoftenpresentin
feedstockmaterialandcanbeintroducedduringprocessing
[6] ดังนั้น majorityofthePVindustrycurrentlyusesPOCl3
แพร่ toremovemetalimpuritiesincludingiron [7-11] POCl3
getteringisattributedtotheformationofmisfit dislocationson
surfacewhichprovidethesinkforimpuritygettering.Inad-
dition, higherphosphorussurfaceconcentrationenhances
getteringbecauseitincreasessolidsolubilityandsegregation
ofmetalimpurities ค่าสัมประสิทธิ์ [7-17] Thephosphorusion-ญ
ปลูก emitterhasrecentlyshownhigherperformanceduetoin-
แหล่งกำเนิด oxidepassivationduringtheimplantannealingprocess
[18,19] อย่างไรก็ตาม itsgetteringqualityisnotfullyunderstoodand
เทียบแพร่ withPOCl3 Thispaperconductsasystematic
และ controlledstudytocomparetheimpactofphosphorusion-
ฝังแพร่ andPOCl3 inducedgetteringoncastquasi-
โมโน andCzochralski (Cz) Sisolarcells

ผลลัพธ์ (ไทย) 3:

siaccountsformorethan90 % ofthesolarcells ผลึกผลิต todayandabout95 % ofthosecellsarefabricatedonพีศรี [ 1 ] thisisbecauseofthewell establishedtechnologyequipmentbaseforp typecellfabricationandlowerwafer และและ cellprocessingcostcomparedton typecells อย่างไรก็ตาม พีwafersgenerallyhavelowerbulklifetimeandaremoresuscep -tible tometalimpuritiescomparedtothen typewafers [ 2 , 3 ] มันมี beenreportedthattheminoritycarrierlifetimeinp typesiisfrequentlylimitedbyironrelateddefects [ 2 , 4 ] กับ largerelectroncapturecrosssectioncomparedtohole [ 5 ] ironisoftenpresentinการ feedstockmaterialandcanbeintroducedduringprocessing[ 6 ] ดังนั้น majorityofthepvindustrycurrentlyusespocl3การแพร่กระจาย toremovemetalimpuritiesincludingiron [ 7 – 11 ] pocl3getteringisattributedtotheformationofmisfit dislocationsonการ surfacewhichprovidethesinkforimpuritygettering.inad -higherphosphorussurfaceconcentrationenhances ditiongetteringbecauseitincreasessolidsolubilityandsegregationสัมประสิทธิ์ ofmetalimpurities [ 7 – 17 ] thephosphorusion im -emitterhasrecentlyshownhigherperformanceduetoin - ปลูกแหล่งกำเนิด oxidepassivationduringtheimplantannealingprocess[ 18,19 ] อย่างไรก็ตาม itsgetteringqualityisnotfullyunderstoodandเมื่อเทียบ withpocl3 แพร่ thispaperconductsasystematiccontrolledstudytocomparetheimpactofphosphorusion - และการ andpocl3 inducedgetteringoncastquasi - การแพร่โมโน andczochralski ( CZ ) sisolarcells .