As a result, the low-voltage-rating switching devices can be used. Low-voltage-rating switching devices usually have fast switching performance and low on-resistance features compared to high-voltage-rating devices. However, nowadays low-power-loss and high-voltage-rating switching devices, such as SiC-MOSFETs have been developed [6]. Thus, small capacitances such as from ceramics and films types
with high voltage capability can be considered together with high-voltage-rating switching devices. As a result, the volume of the flying capacitor can be reduced compared to conventional FCBCs. The 3-level FCBC with a small flying capacitor is discussed in Ref [7]. However, the minimum capacitance selection and its influence in the n-level FCBC have not been discussed [1-3,8,9].