The average roughness of the 20 nm-thick seed layer is 0.46 nm,
which increases very slightly to 0.55 nm with increase of film
thickness to 40 nm. But with increase of seed layer thickness up to
160 nm and 320 nm, the average roughness significantly increases
to 2.78 nm and 3.80 nm, respectively.
These results are in full agreement with AFM images shown in
Fig. 1(AeD).
It is well known that the seed layer plays an important role in the
alignment of nanorods [24] and some results reveal that local
temperature on the substrate, thickness of seed layer, oxygen partial
pressure sputtering and preferred orientation of seed layer are
effective parameters in producing well-aligned nanorods [25e27].
Ji et al. [24], by presenting a model, showed that increase of seed
layer thickness results in smoother surface of the film and hence
The average roughness of the 20 nm-thick seed layer is 0.46 nm,which increases very slightly to 0.55 nm with increase of filmthickness to 40 nm. But with increase of seed layer thickness up to160 nm and 320 nm, the average roughness significantly increasesto 2.78 nm and 3.80 nm, respectively.These results are in full agreement with AFM images shown inFig. 1(AeD).It is well known that the seed layer plays an important role in thealignment of nanorods [24] and some results reveal that localtemperature on the substrate, thickness of seed layer, oxygen partialpressure sputtering and preferred orientation of seed layer areeffective parameters in producing well-aligned nanorods [25e27].Ji et al. [24], by presenting a model, showed that increase of seedlayer thickness results in smoother surface of the film and hence
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