Lateral flow immuno assay test kits for determining the presence of deoxynivalenol (DON) in grain provide relatively simple, cheap and quick detection means, but are only useful if they provide reliable and accurate results. This study aimed to evaluate the performance of four different lateral flow immune assay test kits, being Reveal Q+ DON (Neogen), Donsensor (Unisensor), RidaQuick DON (R-Biopharm AG), and RosaFast DON (Charm Sciences Inc.). The performance was evaluated based on accuracy, repeatability, and toxin recovery of the test kits using three types of wheat sample material. These included samples spiked at three different DON concentrations, reference material with a DON concentration of 900 μg/kg, and naturally contaminated samples with a wide range of DON concentrations.
Most investigations on Zn diffusion in GaAs were processed using the Zn–As alloy sources to prevent the As atoms from escaping GaAs wafers, while we found that the Zn diffusion would change fundamentally if Zn–Ga alloy sources were used. The Ga atoms from the diffusion sources suppressed the formation of the high-concentration surface region in Zn profiles, thus converting a kink-and-tail profile into a box profile. The photoluminescence (PL) analysis was used to identify the diffusion mechanisms. The Ga vacancy defects were found in the surface region of the kink-and-tail profile, indicating that the dissociative mechanism dominated; the PL spectrum in the tail region of kink-and-tail profile and the main region of box profile showed the same signals, no Ga vacancy defects were found, thus the kick-out mechanism dominated.
Lateral flow immuno assay test kits for determining the presence of deoxynivalenol (DON) in grain provide relatively simple, cheap and quick detection means, but are only useful if they provide reliable and accurate results. This study aimed to evaluate the performance of four different lateral flow immune assay test kits, being Reveal Q+ DON (Neogen), Donsensor (Unisensor), RidaQuick DON (R-Biopharm AG), and RosaFast DON (Charm Sciences Inc.). The performance was evaluated based on accuracy, repeatability, and toxin recovery of the test kits using three types of wheat sample material. These included samples spiked at three different DON concentrations, reference material with a DON concentration of 900 μg/kg, and naturally contaminated samples with a wide range of DON concentrations.Most investigations on Zn diffusion in GaAs were processed using the Zn–As alloy sources to prevent the As atoms from escaping GaAs wafers, while we found that the Zn diffusion would change fundamentally if Zn–Ga alloy sources were used. The Ga atoms from the diffusion sources suppressed the formation of the high-concentration surface region in Zn profiles, thus converting a kink-and-tail profile into a box profile. The photoluminescence (PL) analysis was used to identify the diffusion mechanisms. The Ga vacancy defects were found in the surface region of the kink-and-tail profile, indicating that the dissociative mechanism dominated; the PL spectrum in the tail region of kink-and-tail profile and the main region of box profile showed the same signals, no Ga vacancy defects were found, thus the kick-out mechanism dominated.
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