Pulsed laser deposition has unique advantages such as film stoichiometry close to that of the target, low contamination level and high deposition rate. Although pulsed laser deposition of some phosphor materials has been investigated in literature (e.g., ZnGa2O4:Mn2+ [13,14] and ZnGa2O4 [12,15]), studies on the characteristics of ZnGa2O4:Cr3+ thin film phosphors prepared by the pulsed laser deposition technique have been rarely reported. Zhang et al. [7]