Wereportthegrowthprocessofsilicananowires(NWs)grownbyusingathickAu film asacatalyst,and
suggest analternativevapor–liquid–solid mechanismforNWgrowth.ThesilicaNWsweregrownby
high-temperatureannealingofsiliconsubstratescoatedwithanAu film measuringeither20nmor
60 nmthickinaN2 atmosphere. AnumberofAuparticleswereobservedinsidetheNWs,unlikeNWs
grownasingleAuparticleattheirtop.Theresultsareattributedtothepush-upgrowthofNWsbythe
continuous formationofsiliconoxideonthetopand/orsidesurfacesratherthanunderneathofthe
eutectic liquidAu–Si alloysuggestedintheconventionalvapor–liquid–solid process.