The potential
influence on the oxidation rate may be related to many factors, such
as the charge transfer step, adsorption of ions, chemical/physical structure
of the oxidised layer formed or oxidation of various crystallographic
planes of a polycrystalline surface [3,4,6,12]. Apparently constant
thickness of the oxidised layer obtained for long oxidation times [5]
may suggest existence of a limiting thickness of the oxide/hydroxide
or a very lowrate of the oxidation processwhich decreaseswith the oxidation
progress
The potentialinfluence on the oxidation rate may be related to many factors, suchas the charge transfer step, adsorption of ions, chemical/physical structureof the oxidised layer formed or oxidation of various crystallographicplanes of a polycrystalline surface [3,4,6,12]. Apparently constantthickness of the oxidised layer obtained for long oxidation times [5]may suggest existence of a limiting thickness of the oxide/hydroxideor a very lowrate of the oxidation processwhich decreaseswith the oxidationprogress
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