The pursuit for power diodes with faster switching rate/speed, low forward voltage drop, high reverse blocking voltage in many applications, fast reverse recovery, reduced overall resistance in forward mode, and reduced heat/power loss has been going on for more than two decades, and it is becoming more crucial as most power semiconductor devices are able to achieve high switching speed and low loss operation [1]-[6]. Partially, the difficulty in achieving the required high performance of the power diode is because of its simple device structure. The conventional diode electrical performances are closely linked to one another through just a few device arrangement and doping parameters..