The BSWCNT -based power diode comprises doped p-type silicon region, doped n-type silicon region, lightly doped ntype silicon region, and carbon nanotube bundles for the junction interface as demonstrated in Fig. l(a). On other hand, a conventional integrated power diode comprises silicon ptype region and silicon n-type region with the appropriate doping. The junction formed by merging the two doped regions in intimate contact. At the junction, a static, built-in electric field is generated due to the migration of the mobile
carriers. Both conventional and nanotechnology-based power diode will have two types of electric currents transverse through the p-n junction (drift and diffusion). However, the current flows in the forward bias mode in the conventional power diode primarily due to concentration
gradient/imbalance (diffusion). Conversely, in nanotechnology BSWCNT-based power diode, the current will flow through two mechanism, drift (very high electric field) and diffusion
(concentration gradient). Moreover, the BSWCNT-based diode provides lateral electrical conductivities for collecting electric currents from the electrode surfaces of the diode. The
electric currents collected by the BSWCNTs would, in tum, further collected by electrode contact (electrons should travel to collecting surface before they undergo charge recombination, or in other words, the diffusion length is greater than the BSWCNTs thickness). In addition, the
BSWCNT-based power diode has multiplying effect which is due to the cylindrical pore-structure of the BSWCNTs that causes the electrons to be neatly squeezed through the CNTs tube one by one [12]-[20].