Complete IGBT Gate Drive Board with the following feature:
Current sensing and heatsink
temperature sensing capability
Over voltage protection
Includes all power supplies
DC link voltage sensing
Over current protection
Single 26 pin header for all I/O and
input power
Under voltage lock-out
Diagnostic LEDs
Automatic dead time generation
Shoot through protection
Introduction
The BAP1491 Insulated Gate Bipolar Transistor (IGBT) Gate Drive Board (GDB) discussed in
this Datasheet/Application Note provides a safe, reliable, isolated interface between control
logic and an IGBT based power stage. With minimal development time and cost, an effective
inverter can be designed and built using the techniques described below.
Typically, the most unreliable portion of an inverter design is the power stage. In most if not all
cases, this is due to inadequate control of the power semiconductors. The APS IGBT GDB is a
robust design (see Figure 1 Block diagram) offering the necessary protection features to ensure
a reliable power stage including: two forms of over current protection, DC link over voltage
protection, over temperature protection, and under voltage lockout. Also provided as feedback
signals to the control logic are isolated, analog, real-time representations of each phase output
current, the DC link voltage and a temperature sensor interface that can be mounted on a
heatsink.
Complete IGBT Gate Drive Board with the following feature:
Current sensing and heatsink
temperature sensing capability
Over voltage protection
Includes all power supplies
DC link voltage sensing
Over current protection
Single 26 pin header for all I/O and
input power
Under voltage lock-out
Diagnostic LEDs
Automatic dead time generation
Shoot through protection
Introduction
The BAP1491 Insulated Gate Bipolar Transistor (IGBT) Gate Drive Board (GDB) discussed in
this Datasheet/Application Note provides a safe, reliable, isolated interface between control
logic and an IGBT based power stage. With minimal development time and cost, an effective
inverter can be designed and built using the techniques described below.
Typically, the most unreliable portion of an inverter design is the power stage. In most if not all
cases, this is due to inadequate control of the power semiconductors. The APS IGBT GDB is a
robust design (see Figure 1 Block diagram) offering the necessary protection features to ensure
a reliable power stage including: two forms of over current protection, DC link over voltage
protection, over temperature protection, and under voltage lockout. Also provided as feedback
signals to the control logic are isolated, analog, real-time representations of each phase output
current, the DC link voltage and a temperature sensor interface that can be mounted on a
heatsink.
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