In order to grow diamond film on alumina ceramic, it is essential to control the diamond nucleation properly. Under a gas pressure lower than
that used for growth, a high nucleation density of diamond films on alumina, as high as 108/cm2, is successfully achieved by microwave plasmaenhanced
chemical vapor deposition method. Based on this, [100]-textured diamond films are successfully deposited on alumina by controlling
the substrate temperature. From the results on SEM, XRD and Raman measurements, the substrate temperature has a strong influence on the
textured growth and quality of diamond films on alumina substrates. Too low or too high temperature cannot obtain [100]-textured and goodquality
films. The optimum substrate temperature range, for the growth of [100]-textured and good-quality diamond films on alumina, should be
800∼860 °C in our experiments.
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