We have been working on developing an image sensor with three stacked organic photoconductive films (OPFs) sensitive to only one primary color component (red—R, green—G, or blue—B); each OPF has a signal readout circuit. This type of stacked sensor is advantageous for the manufacture of compact color cameras with high-quality pictures, since color separation systems, such as prisms or color filter arrays, are eliminated because of the color selectivity of OPFs. To achieve a high-resolution stacked sensor, its total thickness should be reduced to less than 10 μm. In this study, we fabricated a color image sensor with R and G-sensitive OPFs by applying amorphous In-Ga-Zn-O thin-film transistor (TFT) readout circuits. A 10 μm-thick interlayer insulator separated the R and G-sensitive layers. The entire fabrication process for the device was implemented below 150°C to avoid damaging the OPFs. Output signals were successfully read from each OPF through the TFT circuit, and multi-color images were reproduced from the fabricated sensor. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.