Wedemonstratethecrystallizationofth

Wedemonstratethecrystallizationofthemicrostripsofelectrodepositedamorphousgermanium(Ge)
on grapheneoninsulatorbyrapidmeltinggrowthforthe first time.Growthofsingle-crystallineGe
microstrips with(111)orientationwasconfirmed. Thehighlevelofcompressivestrainwasfoundtobe
resultedfromtheintermixingofCatomsfrommultilayergraphene(MLG)andGe.Probablythein-
troduction oflocalCatomintoGe film enhancesnucleationofGeonMLG,whichresultsin(111)-oriented
Ge nuclei.SubsequentlateralgrowthenablescrystallizationofGewith(111)orientationontheentire
microstrip. Theresultsalsoindicatethatgrapheneisveryusefultosuppressthespontaneousnucleation
in themeltingGe films andthelatticerotationormisorientation.Thisnovelandinnovativetechnique
providesabreakthroughtowardstherealizationofhighqualityGe-on-insulatorstructurestofacilitate
the next-generationultra-large-scaleintegratedcircuits(ULSIs)withmultifunctionalities.

ผลลัพธ์ (ไทย) 1:

Wedemonstratethecrystallizationofthemicrostripsofelectrodepositedamorphousgermanium(Ge)บน grapheneoninsulatorbyrapidmeltinggrowthforthe ครั้งแรก Growthofsingle-crystallineGemicrostrips กับ orientationwasconfirmed (111) ThehighlevelofcompressivestrainwasfoundtoberesultedfromtheintermixingofCatomsfrommultilayergraphene (MLG) andGe.Probablythein-troduction oflocalCatomintoGe ฟิล์ม enhancesnucleationofGeonMLG, whichresultsin (111) -แปลกนิวเคลียสของ Ge Orientationontheentire SubsequentlateralgrowthenablescrystallizationofGewith (111)microstrip Theresultsalsoindicatethatgrapheneisveryusefultosuppressthespontaneousnucleationในภาพยนตร์ andthelatticerotationormisorientation themeltingGe ThisnovelandinnovativetechniqueprovidesabreakthroughtowardstherealizationofhighqualityGe บน insulatorstructurestofacilitateถัดไป-generationultra-ขนาดใหญ่-scaleintegratedcircuits (ULSIs) withmultifunctionalities

ผลลัพธ์ (ไทย) 2:

Wedemonstratethecrystallizationofthemicrostripsofelectrodepositedamorphousgermanium (GE)
ใน grapheneoninsulatorbyrapidmeltinggrowthforthe แรก time.Growthofsingle-crystallineGe
microstrips ด้วย (111) orientationwasconfirmed oflocalCatomintoGe ภาพยนตร์ enhancesnucleationofGeonMLG, whichresultsin (111) ที่มุ่งเน้นGe nuclei.SubsequentlateralgrowthenablescrystallizationofGewith (111) orientationontheentire ไมโคร Theresultsalsoindicatethatgrapheneisveryusefultosuppressthespontaneousnucleation ในภาพยนตร์ themeltingGe ถัดไป generationultra-ขนาดใหญ่ scaleintegratedcircuits (ULSIs) withmultifunctionalities