Abstract – The investigation of the microwave energy
penetration (f = 2,45 ± 0,05 GHz) in the center of the oxygen gas
discharge in the resonant type plasmatron was carried out on
the example of microwave plasma-chemical processing of silicon
plates. The investigation was performed by three independent
methods: using a thermocouple for investigating temperature
characteristics of the microwave discharge; according to the
data of the "active probe" which was injected into the volume of
discharge chamber; using an electric probe which was placed
in the volume of plasma for measuring the electrical
conductivity of the space. The experimental results indicate that
for the levels of microwave power flux density in the discharge
volume ranging within 0.06-0.08 W/cm
3
the microwave field is
entered into the volume of the discharge zone. This effect must
be taken into account when organizing the processes of plasmachemical
treatment
(the
influence
of
microwave
field
on
the
parameters
of
the
processed
structures,
explanation
of
"loading
effect",
when
chosen
construction
of
a
system
for
supplying
microwave
energy
to
the
treatment
area,
in
the
analysis
forms
and
character
of
microwave
field
distribution
in
the
gas
discharge
area,
etc.)
and
for
analysing
the
results
of processing
of
materials
and
semiconductor
structures
which
may
be
exposed
to microwave
energy.