Organometal halide perovskite solar cells have attracted increasing attention from both academia and industry as one of the most promising next generation photovoltaic technologies, despite the uncertainties regarding device stability and the usage of lead . Within only a few years, the power conversion effi-ciency (PCE) of perovskite solar cells has undergone an unprecedented rapid rise, from the first reported PCE value of 3.8% in 2009 to the recently certified highest value of 20.1%. So far, two main device architectures have been used to fabricate perovskite solar cells. One of them is to deposit the perovskite material on transparent substrates covered with a compact TiO2 electron transport/injection layer and an optional meso-porous TiO2 (or Al2O3) scaffold layer (noted here as n-i-p structure) the other one is to create the perovskite crystals on transparent substrates covered with a hole injection/transport poly(3,4ethylenedioxythiophene):polystyrene sulfonic acid (PEDOT:PSS) (noted here as p-i-n structure). In case of the n-i-p structure,high temperature (>400 C) annealing is needed to get high quality TiO2 or Al2O3 layers, which could increase the production cost and prohibit the usage of flexible substrates. Alternative low-temperature layers are recently being investigated In contrast, devices using the p-i-n structure can usually be fabricated at much lower temperature (<100 C), and the fabrication process is compatible with most of the up-scaled technologies used in roll-to-roll processing. Therefore, the perovskite solar cells with the p-i-n structure have attracted plenty of research interest.
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