composition of the alloy as determined by microanalysis. The bulkmaterials were first cut into 1 mm thick sheets (1 cm 1 cm),mechanical polished with silicon carbide paper and diamond polishingpaste and subsequently electropolished at 40 V for approximately10 s in a mixed solution of 80% HClO4 and 20% CH3COOHbelow 0 C. The sheets were then cleaned for 30 min using an ultrasonicbath with acetone, alcohol and deionized water sequentially.The as-prepared bulk specimens were irradiated at room temperaturewith 7 MeV Xe26+ ions up to fluences of 2.5 1018 and1.5 1019 ions/m2 on the 320 kV Highly Charged Ions ResearchPlatform of the Institute of Modern Physics, Chinese Academy ofSciences (IMP-CAS) [13]. The beam current density was approximately7.6 1014 ions/(m2 s). The temperature of the specimensdid not to fluctuate more than ±2 C during the irradiation processby controlling the ion beam intensity (<1 lA). The damage profileswere calculated using SRIM 2008 software [14,15] (Fig. 1), whereinthe displacement energy is 40 eV [15,16]. SRIM 2008 was also usedobtain corresponding displacements per atom (dpa) values, whichwere calculated to be 0.62 and 3.7 dpa, respectively. The calculationswere achieved with ‘‘K-P quick calculation’’, and the dpa wereobtained using the vacancy.txt file. The radiation damage depth(distribution) under 7 MeV Xe26+ ions was calculated to be1400 nm, where the peak damage occurs at 900 nm.
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