Group III-nitridesarenowactivelystu

Group III-nitridesarenowactivelystudiedworldwideforsolar
cell applications.InGaNalloyshaveadirectbandgapfrom0.7to
3.4 eV,whichcoversmostofthevisiblespectrum.Thegrowthof
nanorods promisesapossibleimprovementinthequalityofthe
InGaN materialandthereforeoverrecentyearstherehasbeen
increasing interestinInGaNnanorodsresearchforLEDsandsolar
energy conversion [1–3].
NanorodsofGaN,InNandInGaNhavebeensuccessfullygrown
on differentsubstratesincludingSiandsapphirebyPlasma-
Assisted MolecularBeamEpitaxy(PA-MBE)andMetalOrganic
Chemical VapourDeposition(MOCVD) [1–3]. Ithasbeenestab-
lished thatGaNandInNnanorodscanbegrownbyPA-MBEunder
stronglyN-richgrowthconditions [1–3].
SeveralgroupshavedemonstratedthegrowthofGaNnanorods
by PA-MBEon(0001)sapphire [1–3]. TheGaNnanorodswere
found tobemostlyfreeofthreadingdislocations.Wehaveshown
that bychangingfromN-richtoGa-richMBEconditions,the
growthmodecanbechangedfromverticaltolateral,leadingto
growthofacontinuousGaNoverlayer [4]. Asaresultofgrowing
on thetopofthenanorods,manyofthethreadingdefectsare
eliminated, leadingtocoalescedGaNoverlayerswithaverage
threadingdislocationdensitiesuptotwoordersofmagnitude
lowerthanincontinuousGaNepilayers [4].
InN nanorodswerealsosuccessfullyachievedbyMBEand
MOCVD onSisubstratesbyseveralresearchgroups.However,it
wasevidentthatthebandalignmentisnotsuitableforthe
formation ofthep–n junctionsbetweenInNandSi [5–6]. The
conduction bandofInNisfoundtobebelowthevalencebandfor
Si, andthatmakesthismaterialcombinationnotidealfor
potentialdeviceapplications.
The problemofthebandalignmentcanbeovercomeby
growingInNonSiCsubstrates [7]. Thereisonlyonereportsofar
on thegrowthofInNnanowireson4H–SiC substratesbychemical
vapordepositionmethod [8]. However,tothebestofourknowledge,
therearenoknownpublicationsonInNnanorodsgrownbyMBEon
SiC substrates.
The aimofourresearchwastostudyPA-MBEgrowthofInN
nanorodson6H–SiC forpotentialsolarcellapplications.Wehave
also investigatedcoalescenceofInNnanorodsasawaytoimprove
the qualityofInNlayersgrownon6H–SiC substrates

ผลลัพธ์ (ไทย) 1:

กลุ่ม III-nitridesarenowactivelystudiedworldwideforsolarการใช้งานเซลล์ InGaNalloyshaveadirectbandgapfrom0.7to3.4 eV, whichcoversmostofthevisiblespectrum Thegrowthofnanorods promisesapossibleimprovementinthequalityoftheInGaN materialandthereforeoverrecentyearstherehasbeenเพิ่มขึ้น interestinInGaNnanorodsresearchforLEDsandsolarแปลงพลังงาน [1-3]NanorodsofGaN, InNandInGaNhavebeensuccessfullygrowndifferentsubstratesincludingSiandsapphirebyPlasma-ช่วย MolecularBeamEpitaxy(PA-MBE) andMetalOrganicสารเคมี VapourDeposition(MOCVD) [1-3] Ithasbeenestab-lished thatGaNandInNnanorodscanbegrownbyPA-MBEunderstronglyN-richgrowthconditions [1-3]SeveralgroupshavedemonstratedthegrowthofGaNnanorodsโดยแซฟไฟร์ PA MBEon (0001) [1-3] TheGaNnanorodswereพบ tobemostlyfreeofthreadingdislocations Wehaveshownที่ bychangingfromN-richtoGa-richMBEconditions,growthmodecanbechangedfromverticaltolateral, leadingtogrowthofacontinuousGaNoverlayer [4] Asaresultofgrowingใน thetopofthenanorods, manyofthethreadingdefectsareตัดออก leadingtocoalescedGaNoverlayerswithaveragethreadingdislocationdensitiesuptotwoordersofmagnitudelowerthanincontinuousGaNepilayers [4]อินน์ nanorodswerealsosuccessfullyachievedbyMBEandMOCVD onSisubstratesbyseveralresearchgroups.However,itwasevidentthatthebandalignmentisnotsuitablefortheก่อ ofthep – n junctionsbetweenInNandSi [5-6] การนำ bandofInNisfoundtobebelowthevalencebandforศรี andthatmakesthismaterialcombinationnotidealforpotentialdeviceapplicationsProblemofthebandalignmentcanbeovercomeby การgrowingInNonSiCsubstrates [7] Thereisonlyonereportsofarบน substratesbychemical thegrowthofInNnanowireson4H – SiCvapordepositionmethod [8] อย่างไรก็ตาม tothebestofourknowledgetherearenoknownpublicationsonInNnanorodsgrownbyMBEonเล่นพื้นผิวAimofourresearchwastostudyPA-MBEgrowthofInNnanorodson6H – SiC forpotentialsolarcellapplications Wehaveยัง investigatedcoalescenceofInNnanorodsasawaytoimproveพื้นผิว qualityofInNlayersgrownon6H – SiC

ผลลัพธ์ (ไทย) 2:

กลุ่มที่สาม-nitridesarenowactivelystudiedworldwideforsolar
เซลล์ applications.InGaNalloyshaveadirectbandgapfrom0.7to
3.4 eV, whichcoversmostofthevisiblespectrum.Thegrowthof
แท่งนาโน promisesapossibleimprovementinthequalityofthe
materialandthereforeoverrecentyearstherehasbeen InGaN
เพิ่มขึ้น interestinInGaNnanorodsresearchforLEDsandsolar
แปลงพลังงาน [1-3].
NanorodsofGaN, InNandInGaNhavebeensuccessfullygrown
บน differentsubstratesincludingSiandsapphirebyPlasma-
ช่วย MolecularBeamEpitaxy (PA-MBE) andMetalOrganic
เคมี VapourDeposition (MOCVD) [ 1-3] Ithasbeenestab-
lished thatGaNandInNnanorodscanbegrownbyPA-MBEunder
stronglyN-richgrowthconditions [1-3].
SeveralgroupshavedemonstratedthegrowthofGaNnanorods
โดย PA-MBEon (0001) ไพลิน [1-3] TheGaNnanorodswere
พบ tobemostlyfreeofthreadingdislocations.Wehaveshown
ว่า [4] Asaresultofgrowing บน thetopofthenanorods, manyofthethreadingdefectsare กำจัด [4]. INN nanorodswerealsosuccessfullyachievedbyMBEand MOCVD ofthep-N junctionsbetweenInNandSi [5-6] การนำ bandofInNisfoundtobebelowthevalencebandfor ศรี andthatmakesthismaterialcombinationnotidealfor potentialdeviceapplications. problemofthebandalignmentcanbeovercomeby growingInNonSiCsubstrates [7] Thereisonlyonereportsofar บน thegrowthofInNnanowireson4H-SiC substratesbychemical vapordepositionmethod [8] อย่างไรก็ตาม tothebestofourknowledge, therearenoknownpublicationsonInNnanorodsgrownbyMBEon พื้นผิว SiC. aimofourresearchwastostudyPA-MBEgrowthofInN nanorodson6H-SiC forpotentialsolarcellapplications.Wehave ยัง investigatedcoalescenceofInNnanorodsasawaytoimprove พื้นผิว qualityofInNlayersgrownon6H-SiC

ผลลัพธ์ (ไทย) 3:

กลุ่มที่ 3 nitridesarenowactivelystudiedworldwideforsolarเซลล์ applications.inganalloyshaveadirectbandgapfrom0.7to3.4 whichcoversmostofthevisiblespectrum.thegrowthof รถไฟฟ้าnanorods promisesapossibleimprovementinthequalityoftheingan materialandthereforeoverrecentyearstherehasbeenเพิ่ม interestiningannanorodsresearchforledsandsolarการแปลงพลังงาน [ 1 - 1 ]nanorodsofgan innandinganhavebeensuccessfullygrown ,differentsubstratesincludingsiandsapphirebyplasma - บนช่วย molecularbeamepitaxy ( pa-mbe ) andmetalorganicvapourdeposition เคมี ( 1 ) mocvd ) [ 3 ] ithasbeenestab -thatganandinnnanorodscanbegrownbypa mbeunder lishedstronglyn richgrowthconditions [ 1 - 1 ]severalgroupshavedemonstratedthegrowthofgannanorodsโดยป้า mbeon ( 001 ) 1 –พลอย [ 3 ] thegannanorodswereพบ wehaveshown tobemostlyfreeofthreadingdislocations .ที่ bychangingfromn richtoga richmbeconditions ,growthmodecanbechangedfromverticaltolateral leadingto ,growthofacontinuousganoverlayer [ 4 ] asaresultofgrowingใน thetopofthenanorods manyofthethreadingdefectsare ,leadingtocoalescedganoverlayerswithaverage ตกรอบthreadingdislocationdensitiesuptotwoordersofmagnitudelowerthanincontinuousganepilayers [ 4 ]nanorodswerealsosuccessfullyachievedbymbeand นน์mocvd onsisubstratesbyseveralresearchgroups อย่างไรก็ตามwasevidentthatthebandalignmentisnotsuitablefortheการพัฒนา ofthep – 5 – 6 junctionsbetweeninnandsi [ N ] ที่การ bandofinnisfoundtobebelowthevalencebandforandthatmakesthismaterialcombinationnotidealfor จังหวัดpotentialdeviceapplications .การ problemofthebandalignmentcanbeovercomebygrowinginnonsicsubstrates [ 7 ] thereisonlyonereportsofarใน thegrowthofinnnanowireson4h SIC substratesbychemical จำกัดvapordepositionmethod [ 8 ] อย่างไรก็ตาม tothebestofourknowledge ,therearenoknownpublicationsoninnnanorodsgrownbymbeonSIC ทการ aimofourresearchwastostudypa mbegrowthofinnnanorodson6h – SIC เรา forpotentialsolarcellapplications .ยัง investigatedcoalescenceofinnnanorodsasawaytoimproveการ qualityofinnlayersgrownon6h ( sic )