(c) For L = 0.5 μm, W2 = 25 μm, fT = 12 GHz, and μ nCox = 200 μA/V2, design the circuit to obtain a gain of 3 V/V per stage. Bias the MOSFETs at VOV = 0.3 V. Specify the required values of W1 and I. What is the 3-dB frequency achieved?
(c) For L = 0.5 μm, W2 = 25 μm, fT = 12 GHz, and μnCox =200 μA/V2, design the circuit to obtain a gain of 3 V/V perstage. Bias the MOSFETs at VOV = 0.3 V. Specify the requiredvalues of W1 and I. What is the 3-dB frequency achieved?