The synthesized thin films were also investigated for their characteristics, and optical
and electrical properties. The Cu2SnTe3 is a I2-IV-VI3 ternary chalcogenide with an Eg =1.18
eV [12], which is close to a conventional solar absorber (Eg = 1.1-1.2 eV) [13]. It also
exhibits strong absorption in Vis-NIR region and the optical measurement verified that a
photodetector made by Cu2SnTe3 performing high excellent stability and repeatability [12].
In this work, we interested in synthesizing the Cu2SnTe3 in the form of quantum dots (QDs)
with manganese element as a dopant, coated on a WO3 film, which no literature reported
previously and investigated the structural morphologies, effective optical and electrical
properties of novel Mn2+:Cu2SnTe3 with various immersion times for solar absorber
application.
The synthesized thin films were also investigated for their characteristics, and optical and electrical properties. The Cu2SnTe3 is a I2-IV-VI3 ternary chalcogenide with an Eg =1.18 eV [12], which is close to a conventional solar absorber (Eg = 1.1-1.2 eV) [13]. It also exhibits strong absorption in Vis-NIR region and the optical measurement verified that a photodetector made by Cu2SnTe3 performing high excellent stability and repeatability [12]. In this work, we interested in synthesizing the Cu2SnTe3 in the form of quantum dots (QDs) with manganese element as a dopant, coated on a WO3 film, which no literature reported previously and investigated the structural morphologies, effective optical and electrical properties of novel Mn2+:Cu2SnTe3 with various immersion times for solar absorber application.
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