1. A substrate is coated with a polymer film called resist layer
2. A beam of UV light passes through the mask and react with the resist.
3. The exposed parts of the resist are dissolved during the developing stage
revealing the replica of the mask pattern.
4. The substrate is then placed in an acidic solution which etches silica but not resist or silicon. Once the silica has been removed,
the resist is dissolve in a different solution.
5. Further etches remove silicon from the exposed areas à creating nanostructures.