Two kinds of ARC coatings were deposited, either TiOx or SiNx:H. The TiOx antireflection
coating was deposited by sprayed-on using tetraethylorthotitanat ((C2H5O)4Ti) compounds.
Depositing at 300
oC for 5 seconds resulted in a 80 nm thick layer. The main advantages of this
method are simplicity and a very big throughput. The method is very suitable for solar cells based on
Cz-Si wafers but for multicrystalline cells the SiNx:H deposition by PECVD is more profitable.
Fig. 6 shows the reflectance of the Si texturized, passivated surface with and without the layer
of TiOx ARC and of mc-Si with a SiNx layer.