Abstract—In this letter, we present a linear InGaP/GaAs
HBT power amplifier (PA) with parallel-combined transistors
for small-cell applications. Ballast resistors with bypass resistors
and capacitors are employed in parallel-combined transistors.
When the resistors and capacitors are set to appropriate values,
IMD3 components of the parallel-combined transistors are found
to be out of phase with each other by 180◦ and are canceled
out at the output.