Power MOSFETs perform excellently as power switching
devices. However, power MOSFETs have a possible
catastrophic failure mode known as SEB which is important to
consider in space electronic applications.
Several models for SEB have been proposed [14]S.in ce
nondestructive SEB measurements have been done under a
simple current monitor circuit with pulse counter [5], the
details of the SEB mechanism have not been identified
experimentally. Newly developed characterization technique
called EPICS (Energetic Particle Induced Charge Spectroscopy)
gives detailed information about the phenomenon.
Several power MOSFETs and a test structure were exposed
to mono-energetic ions and characterized by EPICS. The
experimental data revealed the detailed triggering mechanism
and gave a parameter representing SEB hardness.