Junction Defect Detection -
The boundary of the pn junction serves as a
transition point for majority carriers where
electron beam-induced generation currents
originate. As these carriers drift across the
junction and recombine, at the current amplifier,
the outline of the diffusion becomes delineated.
In regions where defects are within the junction
(or within a diffusion length of the junction), the
recombination will be enhanced and the current
production reduced. This results in an
attenuation of the EBIC signal into the current
amplifier and a dark contrast on the EBIC picture at defect sites.