CdO semiconductor were prepared by wet chemical precipitation method using sodium dodecyl sulfate (SDS) as surfactants. First, 3.0868 g Cd(NO3)2•4H2O were dissolved into 25 mL reverse osmosis water under magnetic stirring. Then appropriate amounts of sodium dodecyl sulfate (SDS) were added into the solution, kept stirring for 2 hours. Then, 1.0 M NaOH excess were added into the above solution and stirred for 24 hours at room temperature. After stirring, the precipitates of CdO semiconductor were filtered, washed with reverse osmosis water, dried at 80 ºC in the air for 8 hours. Finally, CdO semiconductor were obtained.
The presence of functional groups and chemical bonding had been confirmed by FT-IR spectroscopy (Spectrum one FT-IR spectrometer Perkin Elmer). The optical properties and band gap energy of CdO nanostructures were studied by UV-Vis diffused reflectance spectroscopy (Shimadzu UV-3101PC). The photoluminescence spectra were measured using a fluorometer (RF-5301PC) with a solid sample holder.