1. Introduction
Titaniumdioxide is awide-gap semiconductor,which is based on its
optical and electronic properties, widely and versatilely used as
gemstone, white pigment and renewable energy material in dyesensitized
solar cells or photocatalytic material for water splitting.
Also in the emerging technology of non-volatile resistive switching
memories TiO2 is used as insulator layer inmetal-insulator-metal capacitor
structures [1,2]. Many of these applications are based on thin
layers of only a few nanometers on plane substrates or, more likely,
on three dimensionally structured substrates. Since atomic layer deposition
(ALD) facilitates the deposition of thin layers with monolayer
control of the thickness and allows a homogeneous deposition on 3D
substrates, it is a widely used technique for the fabrication of thin
oxide layers in microelectronics. It is however, potentially also interesting
for the deposition of catalytic active oxide materials on porous substrates
with large specific surfaces.