Some electrodes of all PTO and PZT thin films were pre-poled to make the positive remanent polarization state (+Pr) before the irradiation. Therefore, we investigated the electrical properties of the prepoled electrodes and the non-pre-poled electrodes in all the samples. The pre-poled parts of PTO and PZT are here denoted by PTO-P and PZT-P, respectively, and the non-pre-poled parts of PTO and PZT are denoted by PTO-NP and PZT-NP, respectively. Polarization versus electric field (P–E) hysteresis loops and polarization fatigue of the films were obtained with the FE module of the Thin Film Analyzer 2000 (aixACCT Systems, Germany), a computer-based measurement tool used to characterize
ferroelectric thin films. The dielectric properties of the films were obtained by using the HP 4194A impedance analyzer (Agilent Technologies, USA).
Some electrodes of all PTO and PZT thin films were pre-poled to make the positive remanent polarization state (+Pr) before the irradiation. Therefore, we investigated the electrical properties of the prepoled electrodes and the non-pre-poled electrodes in all the samples. The pre-poled parts of PTO and PZT are here denoted by PTO-P and PZT-P, respectively, and the non-pre-poled parts of PTO and PZT are denoted by PTO-NP and PZT-NP, respectively. Polarization versus electric field (P–E) hysteresis loops and polarization fatigue of the films were obtained with the FE module of the Thin Film Analyzer 2000 (aixACCT Systems, Germany), a computer-based measurement tool used to characterizeferroelectric thin films. The dielectric properties of the films were obtained by using the HP 4194A impedance analyzer (Agilent Technologies, USA).
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