Giant dielectric materials for using in microelectronics such
as memory devices and capacitors have been widely investigated
since the dielectric permittivity enables the decision of the level of
miniaturization [1,2]. In previous studies, ferroelectric oxides [e.g.
BaTiO3] or relaxor [e.g. (Bi, Sr) TiO3] have high dielectric permittivity.
However, a temperature dependence of the permittivity is
found, which can lead to failure of applicability in microelectronic
devices based on these materials under a variety of conditions.