Inorganic semiconductors are promising as light harvesting
material for next generation q-dot sensitized solar cells [1].
Attractive feature of q-dots is the ability to tune the band gap of q-dots
to harvest near infra-red to ultraviolet region of the solar spectrum [2].
Characteristic features of q-dots such as tunable band gaps and broad-band absorption properties,persuade sci-entific research interest on semiconductor sensitized solar cells[3].
Light harvesting q-dots can be anchored on high bandgap mesoporous semiconductor materials to sensitize the semi-conductor based photoanode resembling to configuration of dye
sensitized solar cells(DSSC) [4].