The system of temperature control proposed was satisfactory
for the purpose of the project, which seeks a precise temperature
control for electronic devices, where the maximum error in the
steady state is ± 0.1 DC. These results showed a reduction of 92%
of the temperature ripple on the DUT, when compared with the
model proposed in [2]. The development of a reliable electric
model has facilitated the design of digital control. The gains in the
simulation correspond to the actual behavior of the cell, enabling
design the control for different IC's, if we know the thermal
resistance and capacitance of the package. For the temperature
control of devices with larger dimensions, on a greater range of
thermal variation, cells with higher power can be use or
associated in series [6]. The system developed will be used in
future work, seeking to evaluate the efficiency of power
semiconductor devices, when subjected to extreme temperature
changes.