Abstract—Use of multilevel inverters has become popular in
recent years for high-power applications. Various topologies and
modulation strategies have been investigated for utility and drive
applications in the literature. Trends in power semiconductor
technology indicate a tradeoff in the selection of power devices in
terms of switching frequency and voltage-sustaining capability.
New power converter topologies permit modular realization of
multilevel inverters using a hybrid approach involving integrated
gate commutated thyristors (IGCT’s) and insulated gate bipolar
transistors (IGBT’s) operating in synergism. This paper is devoted
to the investigation of a hybrid multilevel power conversion system
typically suitable for high-performance high-power applications.
This system, designed for a 4.16-kV 100-hp load is comprised of
a hybrid seven-level inverter, a diode bridge rectifier, and an IGBT
rectifier per phase. The IGBT rectifier is used on the utility side as
a real power flow regulator to the low-voltage converter and as a
harmonic compensator for the high-voltage converter. The hybrid
seven-level inverter on the load side consists of a high-voltage
slow-switching IGCT inverter and a low-voltage fast-switching
IGBT inverter. By employing different devices under different
operating conditions, it is shown that one can optimize the power
conversion capability of the entire system. A detailed analysis of a
novel hybrid modulation technique for the inverter, which incorporates
stepped synthesis in conjunction with variable pulsewidth
of the consecutive steps is included. In addition, performance
of a multilevel current-regulated delta modulator as applied to
the single-phase full-bridge IGBT rectifier is discussed. Detailed
computer simulations accompanied with experimental verification
are presented in the paper
Abstract—Use of multilevel inverters has become popular inrecent years for high-power applications. Various topologies andmodulation strategies have been investigated for utility and driveapplications in the literature. Trends in power semiconductortechnology indicate a tradeoff in the selection of power devices interms of switching frequency and voltage-sustaining capability.New power converter topologies permit modular realization ofmultilevel inverters using a hybrid approach involving integratedgate commutated thyristors (IGCT’s) and insulated gate bipolartransistors (IGBT’s) operating in synergism. This paper is devotedto the investigation of a hybrid multilevel power conversion systemtypically suitable for high-performance high-power applications.This system, designed for a 4.16-kV 100-hp load is comprised ofa hybrid seven-level inverter, a diode bridge rectifier, and an IGBTrectifier per phase. The IGBT rectifier is used on the utility side asa real power flow regulator to the low-voltage converter and as aharmonic compensator for the high-voltage converter. The hybridseven-level inverter on the load side consists of a high-voltageslow-switching IGCT inverter and a low-voltage fast-switchingIGBT inverter. By employing different devices under differentoperating conditions, it is shown that one can optimize the powerconversion capability of the entire system. A detailed analysis of anovel hybrid modulation technique for the inverter, which incorporatesstepped synthesis in conjunction with variable pulsewidthof the consecutive steps is included. In addition, performanceof a multilevel current-regulated delta modulator as applied tothe single-phase full-bridge IGBT rectifier is discussed. Detailedcomputer simulations accompanied with experimental verificationare presented in the paper
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