During these reactions (6.5), (6.6) and (6.7) and while surface activity penetration function is working, the chemical actions are further accelerated by the mechanical action of the added fine particles and the frictional exoergic reaction with the processing surface.
From this processing mechanism of GaAs, a slurry with an oxidant to which a small quantity of alkali hydroxide is added is basically effective for the mechanochemical polishing of GaAs crystals. Achieving high-quality surfaces by adding a DN agent with a surface penetration function allows for removal of the reaction products (films, stains) from the surfaces.