By selecting a transistor with a high collector voltage requirement, we can increase its
output impedance over a transistor that operates at lower values of collector voltage.
It is possible to increase the bandwidth by using a higher order of output matching
network. For example, instead of an L network, a double-L network can be used to
convert first to an intermediate impedance, and then to the final value.
Note that this equation provides only the load resistance, when usually in the datasheets the
manufacturer provides values of shunt output capacitance vs frequency for the RF power
transistor.