A local high pressure micro plasma jet performed in a SEM
chamber was proposed. A small orifice gas nozzle having 40 mm in
diameter was used to sputter a Silicon substrate locally. Gap
distance, gas flow rate and discharge parameters (Id, Vd and Td)
playing an important role in the characteristics of local sputter
etching were studied. By using Ar 2.5 sccm gas flow rate at a gap
distance of 100 mm, the sputtering rate of the Silicon substrate was
0.01 mm/s with 60 mm in diameter at DC power of 1.68 mW. The
sputtered area was very smooth compared to its edge where there
were redeposited Si particles and bubbles. To achieve a good result
of sputtered area and sputtering rate it is important that, the
aforementioned parameters should be chosen properly.