Fig. 8 SiNW transistor arrays fabricated on flexible plastics. (a) DF optical image of a top-gated multi-NW transistor device. Scale bar: 50 mm. Inset, photograph of a plastic substrate containing 3 3 NW FETs device arrays with each array containing 400 devices. (b) Typical I –V curves of a multi- ds ds NW FET. (V 3 V to 3 V, from top to bottom). (c) Typical I –V characteristics with V at 1 V. Inset, histogram of I showing uniform device g ds g ds on characteristics. (d) Histogram of V from analysis of over 60 randomly chosen devices in the array. Adapted from Ref. 27