Silicene and related buckled materials are distinct from both the conventional two dimensional electron
gas and the famous graphene due to strong spin orbit coupling and the buckled structure. These materials
have potential to overcome limitations encountered for graphene, in particular the zero band gap
and weak spin orbit coupling. We present a theoretical realization of quantum capacitance which has
advantages over the scattering problems of traditional transport measurements. We derive and discuss
quantum capacitance as a function of the Fermi energy and temperature taking into account electron–
hole puddles through a Gaussian broadening distribution. Our predicted results are very exciting and
pave the way for future spintronic and valleytronic devices