Also, the
reduction of grain size indicates the amorphization of the film associated
with an increase of the CrN lattice parameter to 4.1682 Å.
With a further increase in Si content leads to a reduction in lattice
parameters due to the migration of N from CrN at the grain boundaries
to form an amorphous silicon nitride (SiNx) compound [9,10].
The detail analysis shows that the intensity of a dominating peak
(1 1 1) is decreasing, from (a) to (e), with increase in Si content but
(2 0 0) intensity is increasing up to 6.33 at.% Si, during deposition in
both the deposition on SS 304 and Si(1 0 0) substrates. In addition,
a peak broadening occurs, indicating a reduction in particle size.
A further increases in Si (up to 14.88 at.% Si) content reduce the
peak intensity of (2 0 0) orientation with broadening. Finally, all the
peaks are suppressed at very high Si content (at 18.65 at.% Si), crystallinity
is almost negligible, indicating an amorphous structure due
to formation of SiN phase. There is no evidence of crystalline peaks
of Six−1Nx (silicides) in the XRD patterns of SS304 as well as Si(1 0 0)
substrates, as reported in the literature [9,13–16].
Also, the
reduction of grain size indicates the amorphization of the film associated
with an increase of the CrN lattice parameter to 4.1682 Å.
With a further increase in Si content leads to a reduction in lattice
parameters due to the migration of N from CrN at the grain boundaries
to form an amorphous silicon nitride (SiNx) compound [9,10].
The detail analysis shows that the intensity of a dominating peak
(1 1 1) is decreasing, from (a) to (e), with increase in Si content but
(2 0 0) intensity is increasing up to 6.33 at.% Si, during deposition in
both the deposition on SS 304 and Si(1 0 0) substrates. In addition,
a peak broadening occurs, indicating a reduction in particle size.
A further increases in Si (up to 14.88 at.% Si) content reduce the
peak intensity of (2 0 0) orientation with broadening. Finally, all the
peaks are suppressed at very high Si content (at 18.65 at.% Si), crystallinity
is almost negligible, indicating an amorphous structure due
to formation of SiN phase. There is no evidence of crystalline peaks
of Six−1Nx (silicides) in the XRD patterns of SS304 as well as Si(1 0 0)
substrates, as reported in the literature [9,13–16].
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