The gate-referred power spectral density (PSD) of the 1/ f
noise generated by the in-pixel SF is inversely proportional to
its gate size and the squared oxide capacitance per unit-area.
But the conversion gain of the pixel is linearly dependent on
the product of the in-pixel SF gate size and oxide capacitance
per unit area. Consequently, it is important to start from a
detailed analytical calculation of the input-referred 1/f noise.
Based on [8] and using the EKV formalism [15], the inputreferred
1/f noise charge variance can be expressed as
Q2n
,1/f
= αCMS
K CP + 2Ce · W + 23
Cox · W · L
2
C2
ox
· W · L
(1)