We annealed the films at different tem- peratures (100, 150 and 200 oC) under N2 ambient for 8 h, and characterized the crystallinity and mor- phology of the Bi-Te films. Microstructure characterization using x-ray diffraction and scanning electron microscopy disclosed that the post-annealing treatment entailed a drastic microstructural evo- lution by inducing the development of a strong texture of grains with their c-axis oriented normal to the substrate. In addition, we measured the electrical transport and thermoelectric properties of the films to reveal their close link with the microstructure changes. The electron mobility and Seebeck coefficient increase significantly, leading to a remarkable improvement in the power factor from 3.3 w/K cm for the as-deposited sample to 24.1 HwIK2 cm for the 200 ac annealed sample.